Transcend's MTE710T M.2 SSD uses the PCI Express (PCIe) Gen 4 x4 interface and supports NVM Express (NVMe) 1.4 specifications, achieving unprecedented transfer speeds. The MTE710T features next-generation 3D NAND technology, which enables 112 layers of 3D NAND Flash chips to be stacked vertically. Compared to 96-layer 3D NAND technology, this density advancement greatly improves storage efficiency, and its integrated DRAM cache enables faster access. Equipped with Corner Bond technology and 30 µ" PCB connectors, the MTE710T has undergone extensive internal testing to ensure reliability in key applications, and boasts a durability rating of 3000 write and erase cycles, as well as an extended operating temperature ranging from -20℃ to 75 ℃.

112-layer 3D NAND Flash

PCB has 30µ thick gold connection pins

Corner Bond

Extended Temperature

Dynamic Speed Limit Adjustment

Alteration in Reading Data

Rubbish Collection

Wear levelling


Faulty Block Management

Early Move

Firmware features

  • Supports NVM commands
  • SLC cache technology
  • Dynamic thermal throttling
  • LDPC ECC (Error Correction Code) function Integrated
  • Advanced Global Wear Leveling and Defective Block Management for Reliability
  • Advanced Garbage Collection
  • Enhanced S.M.A.R.T. function for durability
  • TRIM command for better performance
  • Encryption of entire disk with Advanced Encryption Standard (AES) (optional)

Hardware features

  • Complies with RoHS standards
  • Compliant with PCI Express 3.1 specifications
  • Compliant with NVM Express 1.4 specifications
  • M.2 form factor (80mm) - ideal for mobile computing devices
  • PCIe Gen 4 x 4 interface
  • Integrated DDR4 cache module
  • Endurance: 3K cycles P/E (Program/Delete) guaranteed
  • The main components are factory reinforced with Corner Bond technology.
  • PCB has 30µ thick gold connection pins
  • Promised operational reliability over an extended temperature range (-20°C to 75°C)
  • Supports Transcend's Scope Pro software



Dimensions 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″)
Weight 10 g (0.35 oz)
Form Factor M.2
Type M.2 2280-D2-M (Double-sided)


Bus Interface NVMe PCIe Gen4 x4


Flash Type 3D NAND Flash
Capacity 256 GB/

512 GB/

1 TB/

2 TB

Operating Environment

Operating Voltage 3.3V±5%
Operating Temperature

-20°C (-4°F) ~ 75°C (167°F)

Storage Temperature -55°C (-67°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
Hit 1500 G, 0.5 ms, 3 axes
Vibration (Operating) 20 G (Peak-to-Peak), 7 Hz ~ 2000 Hz (frequency)


Power consumption (Operating) 4.9 watt(s)
Energy consumption (IDLE) 1.52 watt(s)


Sequential Read / Write (CrystalDiskMark) Read: Up to 3,800 MB/s
Write: Up to 3,200 MB/s
4K Random Read / Write (IOmeter) Read: Up to 500,000 IOPS
Write: Up to 560,000 IOPS
Mean Time Between Failures (MTBF) 5,500,000 hour(s)
Terabytes Written (TBW) Up to 1,700 TBW
Number of Discs Written Per Day (DWPD) 1.55 (3 years)
Note Speed may vary due to host, hardware, software, usage and storage capacity.

The workload used to rate DWPD may be different compared to your actual workload, due to the difference in hardware, software, usage and storage capacity of the host.

Terabytes Written (TBW) indicates the resistance under the highest capacity.

Call Now Button