MTE670T

Transcend's MTE670T M.2 SSD features PCI Express (PCIe) Gen 3 x4 interface and supports NVM Express (NVMe) 1.3 specifications for never-before-seen transfer speeds. The MTE670T features next-generation 3D NAND technology, which enables 112 layers of 3D NAND flash chips to be stacked vertically. Compared to 96-layer 3D NAND, this density advancement greatly improves storage efficiency. Applied with a PCB with 30µ" gold connection pins and Corner Bond technology, the MTE670T is fully tested in-house to ensure reliability in mission-critical applications, with a P/E endurance rating of 3K cycles and an extended operating temperature range of -20℃ ~ 75℃.

112-layer 3D NAND Flash

PCB has 30µ thick gold connection pins

Corner Bond

Extended Temperature

Dynamic Speed Limit Adjustment

Alteration in Reading Data

Rubbish Collection

Wear levelling

TRIM

Faulty Block Management

Alteration in Reading Data

Power Shield (PS)

Firmware features

  • Supports NVM commands
  • SLC cache technology
  • Dynamic thermal throttling
  • LDPC ECC (Error Correction Code) function Integrated
  • Advanced Global Wear Leveling and Defective Block Management for Reliability
  • Advanced Garbage Collection
  • Enhanced S.M.A.R.T. function for durability
  • TRIM command for better performance

Hardware features

  • Complies with RoHS standards
  • Compliant with NVM Express 1.3 specifications
  • Compliant with PCI Express 3.1 specifications
  • M.2 form factor (80mm) - ideal for mobile computing devices
  • PCIe Gen 3 x 4 interface
  • Endurance: 3K cycles P/E (Program/Delete) guaranteed
  • The main components are factory reinforced with Corner Bond technology.
  • PCB has 30µ thick gold connection pins
  • Power Shield (PS) to ensure data transfer integrity and minimise data corruption in the drive during an abnormal power outage
  • Extended temperature (-20°C ~ 75°C) and Wide temperature (-40°C ~ 85°C) options available
  • Supports Transcend's Scope Pro software

Specifications

Appearance

Dimensions 80 mm x 22 mm x 2.23 mm (3.15″ x 0.87″ x 0.08″)
Weight 9 g (0.32 oz)
Form Factor
  • M.2
Type M.2
  • 2280-S2-M (Single-sided)

Interface

Bus Interface
  • Gen3 x4 NVMe PCIe

Storage

Flash Type
  • 112-layer 3D NAND flash
Capacity
  • 128 GB/
  • 256 GB/
  • 512 GB/
  • 1 TB

Operating Environment

Operating Voltage
  • 3.3V±5%
Operating Temperature
  • Extentida

    -20°C (-4°F) ~ 75°C (167°F)

  • Wide temperature

    -40°C (-40°F) ~ 85°C (185°F)

Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
Hit
  • 1500 G, 0.5 ms, 3 axes
Vibration (Operating) 20 G (Peak-to-Peak), 7 Hz ~ 2,000 Hz (frequency)

Feeding

Power consumption (Operating) 3.1 watt(s)
Energy consumption (IDLE) 0.4 watt(s)

Performance

Sequential Read / Write (CrystalDiskMark) Read: Up to 2,100 MB/s
Write: Up to 1,600 MB/s
4K Random Read / Write (IOmeter) Read: Up to 150,000 IOPS
Write: Up to 280,000 IOPS
Mean Time Between Failures (MTBF) 3,000,000 hour(s)
Terabytes Written (TBW) Up to 960 TBW
Number of Discs Written Per Day (DWPD) 0.88 (3 years)
Note
  • Speed may vary due to host, hardware, software, usage and storage capacity.
  • The workload used to rate DWPD may be different compared to your actual workload, due to the difference in hardware, software, usage and storage capacity of the host.
  • Terabytes Written (TBW) indicates the resistance under the highest capacity.
Call Now Button